발행물
컨퍼런스
Mat. Res. Soc.
1998
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Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon
Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series
Characterization of InGaN/GaN lasing structures for high temperature device applications
1997
Photoluminescence excitation study of LO-phonon assisted excitonic transitions in GaN
Optoelectronics and Communications Conference (OECC) ’97 Technical Digest
Effects of substrate orientation on formation and characteristics of self-assembeld InP/InGaP quantum dot lasers