In this paper, Hot Carrier Degradation (HCD/HCI) characterization results measured on Low V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs) used in Dynamic Random Access Memory (DRAM) for mobile and automotive applications are presented. Dependence of HCD on Gate Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GSTR</inf>), Drain Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf>), and Stress Temperature (T) are investigated and analyzed. Degradation mechanisms at various conditions are proposed based on the experimental signature of the measured data. Parametric degradation at end-of-life (EOL) is predicted with conventional exponential V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> model and benchmarked against an augmented V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> dependence model that is calibrated across wide range of data.