We present a ferroelectric NAND (FENAND) design that steepens the incremental step pulse programming (ISPP) slope and enhances reliability via a laminated FE stack. The laminate incorporates a 3 Å Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer at the mid-plane of a 15 nm HfZrO2 film. This structural modification reshapes the polarization-voltage loop, yielding a 25 % increase in coercive voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>C</sub></i>) and a 19 % reduction in remnant polarization (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P<sub>r</sub></i>). Consequently, the ISPP slope improved by 16 %. The improvement stems from two effects: (1) Before switching, higher <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>C</sub></i> delays FE reversal, allowing more program voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>PGM</sub></i>) to drop across the gate insulator (G.IL), strengthening the field and boosting gate-side injection. (2) After switching, reduced <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P<sub>r</sub></i> lowers the compensation charge at the channel interface, suppressing channel-side injection. Lowering charge injection through channel insulator (Ch.IL) during write, without sacrificing memory window (MW), mitigates dielectric stress, achieving 10-year retention and endurance up to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles. This FE stack design provides practical guidelines for scaling <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>PGM</sub></i> and spacer dimensions in high-density 3D FENAND.