김효정 교수 연구실
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·2025
Single crystal halide perovskites for resistive switching memory devices and artificial synapse
Hyojung Kim
IF 4.7Materials Advances
초록
Single-crystal halide perovskites, with defect-lean ABX 3 structures, offer promising solutions for energy-efficient, reliable resistive-switching memories in AI and edge computing, overcoming challenges of grain boundaries and ion migration.
키워드
HalideMaterials scienceSynapseOptoelectronicsResistive touchscreenNon-volatile memoryNanotechnologyChemistryElectrical engineeringInorganic chemistry