This study proposes a novel approach to achieving highly reliable, low-voltage polarization switching of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin films using polymorph- and orientation-controlled W electrodes ((111)-textured α-W and (200)-textured β-W) by adjusting the sputtering conditions. We demonstrated the formation of (111) and (002)/(020)-textured HZO films on the (111)-textured α-W and (200)-textured β-W electrodes, respectively. Under a low-voltage pulse of 1.2 V (1.5 MV/cm), α-W/HZO/α-W and β-W/HZO/β-W capacitors exhibited double-remanent polarization (2 P r ) values of 29.23 μC/cm 2 and 25.16 μC/cm 2 , which were higher than that of the TiN/HZO/TiN capacitor by 33% and 14%, respectively, and a high endurance of 10 9 cycles without hard-breakdown. The differences in the ferroelectric properties and switching kinetics were understood based on the polymorphism and texture of the HZO films influenced by electrode materials. • The (110)-oriented α-W and (200)-oriented β-W electrodes were achieved by simply adjusting the sputtering pressure. • The (111) and (002)/(020) textured Hf 0.5 Zr 0.5 O 2 films could be formed on the (111) α-W and (200) β-W electrodes. • The α-W/HZO/α-W and β-W/HZO/β-W capacitor show double remanent polarization value of 29.23 and 25.16 μC/cm 2 with a pulse of 1.2 V. • Electrical hard breakdown did not occur in both the α-W/HZO/α-W or β-W/HZO/β-W capacitors, even after 10 9 switching cycles. • The t 1 values, the median switching time, for the α-W/HZO/α-W and β-W/HZO/β-W capacitors were 2.64 and 3.24 μs, respectively.