이동규 교수 연구실
article|
인용수 3
·2024
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles
Joosung Oh, Jae-hyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Hong-Hyun Kim, Baeseong Kwon, Dongkyu Lee, Minkwan Kim, Seungmo Noh, Jong-Min Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, Kwang-Seok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Taeyoung Lee, Kyung-Tae Nam, Minkwon Cho, Boyoung Seo, Shin-Hee Han, Yoon-Jong Song, Kangho Lee, Ja-Hum Ku
초록
We present a 14nm FinFET embedded MRAM (eMRAM) technology for non-volatile RAM (nvRAM) applications, featuring endurance of 1E12 cycles, 100ns write speed, 150°C retention for 10 years, and macro density of 18Mb/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. With SRAM interface, this macro provides write speed 24 times faster than flash-type eMRAM and ~50% area saving compared to SRAM. Compared to 28nm nvRAM-type eMRAM, we have improved retention temperature from 89°C to 150°C at the same endurance characteristics, which is suitable for automotive-grade products.
키워드
Magnetoresistive random-access memoryNon-volatile memoryNode (physics)Automotive industryMaterials scienceRandom access memoryEmbedded systemComputer scienceOptoelectronicsEngineering