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·2025
Impact of Double-Gate Structure on Temporal and Reinforced Synaptic Weight Updates in Electrolytic-Gated Synapse Transistors
Hyun‐Sik Woo, Sung‐Min Yoon
IF 4.5IEEE Electron Device Letters
초록

The impact of double-gate (DG) structure on synaptic weight updates was investigated in electrolytic-gated synapse transistors. DG devices showed reinforced conductance modulation in response to the application of different bottom-gate biases. Furthermore, the introduction of an additional gate provided access to an additional presynaptic input, allowing superlinear integration of synaptic weights for more efficient update processes.

키워드
SynapseTransistorOptoelectronicsElectrolyteMaterials scienceLogic gateElectrical engineeringComputer scienceElectrodeChemistry
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article
IF / 인용수
4.5 / 0
게재 연도
2025