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구성원
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인용수 3
·2025
Process design for improvement in device performance of top-gate TFTs using In-Sn-Zn-O channels prepared by thermal atomic-layer deposition
Jongryeol Yoo, Young-Ha Kwon, Nak‐Jin Seong, Kyu-Jeong Choi, Jong‐Heon Yang, Chi-Sun Hwang, Sung‐Min Yoon
IF 4.6Materials Science in Semiconductor Processing
키워드
Materials scienceAtomic layer depositionLayer (electronics)Deposition (geology)OptoelectronicsProcess (computing)ThermalNanotechnologyComputer science
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article
IF / 인용수
4.6 / 3
게재 연도
2025