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구성원
article|
인용수 4
·2025
Crystallographic orientation engineering of In2O3 channel via thickness modulation for high-mobility top-gate thin-film transistors
Chae-Eun Oh, Sung‐Min Yoon
IF 6.3Journal of Alloys and Compounds
키워드
Thin-film transistorMaterials scienceModulation (music)TransistorOptoelectronicsOrientation (vector space)Electron mobilityChannel (broadcasting)Thin filmNanotechnology
타입
article
IF / 인용수
6.3 / 4
게재 연도
2025