Abstract In this work, low-power RRAM (Resistive random-access memory) devices were characterized by a SiO 2 layer serving as an oxygen scavenging barrier, which suppresses conductive filament overgrowth and reduces operation current and power consumption. Additionally, the integration of an AlO x /TiO y overshoot suppression layer enabled intrinsic self-compliance and forming-free operation. XPS analysis confirmed the oxygen composition of the oxygen-rich TiO y , and it was also verified that the higher oxygen composition in TiO y suppresses filament formation, which decreases the operation current. Consequently, the SiO 2 layer decreases the LRS current significantly by 10 3 times. Furthermore, the device demonstrates the endurance of 6 × 10 3 cycles and retention over 10 4 s, maintaining analog multi-bit operation. When the proposed device was integrated into an 8 × 8 passive array and programmed with the designated weights, a low mean absolute error (MAE) of 10.8 nA was achieved. Additionally, vector-matrix multiplication operations demonstrated excellent accuracy, with over 99% of results falling within an error margin of 10%. Based on this low MAE, MNIST image classification simulations were conducted, yielding classification accuracy exceeding 96%.