In order to have a high-quality crystallinity for boosting the device performance, the metal-induced lateral crystallization (MILC), using Ni becomes a critical process in semiconductor industries. Simulating full process has difficulties because of scale difference between nanometer-scale atomistic process and micrometer-scale device. In this study, we first present full device scale simulation of MILC process, using efficient atomistic kinetic lattice Monte Carlo simulation. Balance between thermodynamics and kinetics reveals that the crystallization rate is dominated by the energetically stable interfaces. Moreover, we found the dynamic instability of the MILC process, which could potentially fail the device fabrication in a few micrometer scale.