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구성원
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인용수 5
·2025
Steep‐Slope CuInP 2 S 6 Ferroionic Threshold Switching Field‐Effect Transistor for Implementation of Artificial Spiking Neuron
Sungpyo Baek, Young Kwon Kim, Sang‐Min Lee, Sang‐Min Lee, HaeJu Choi, Ji‐Sang Park, Byung Chul Jang, Sungjoo Lee, Sungjoo Lee
IF 26.8Advanced Materials
초록

ion migration induce a phase transition, leading to sharp resistance switching and efficient spiking. This device successfully mimics key neuronal dynamics, including leaky integrate-and-fire, threshold tuning, and spatiotemporal dynamics, without requiring auxiliary reset circuits. Furthermore, SNN is constructed by integrating CIPS-based synaptic and neuron devices and evaluate face classification performance using an unsupervised learning approach, achieving a recognition accuracy of 95.83% via the lateral inhibition function of the neuron device. The findings highlight the potential of CIPS TS-FET as energy-efficient spiking neuron device applications for next-generation SNN-based neuromorphic computing systems.

키워드
Materials scienceTransistorField-effect transistorField (mathematics)OptoelectronicsArtificial neuronNanotechnologyElectrical engineeringArtificial neural networkVoltage
타입
article
IF / 인용수
26.8 / 5
게재 연도
2025

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