이신형 교수 연구실
article|
인용수 0
·2025
Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing
Hayoung Kim, Amos A. Boampong, Yujeong Hwang, Sin-Hyung Lee, Min-Hoi Kim
Journal of Materials Chemistry C
초록
Dual-gate multi-bit memory transistors that combine charge-trap and ferroelectric effects are demonstrated as a synaptic memory with high dynamic range.
키워드
Neuromorphic engineeringTransistorComputer data storageNon-volatile memoryFerroelectricitySemiconductor memory