Next‐generation artificial tactile systems demand seamless integration with neuromorphic architectures to support on‐edge computation and high‐fidelity sensory signal processing. Despite significant advancements, current research remains predominantly focused on optimizing individual sensor elements, and systems utilizing single neuromorphic components encounter inherent limitations in enhancing overall functionality. Here, we present a vertically integrated in‐sensor processing platform, which combines a three‐dimensional antiferroelectric field‐effect transistor (AFEFET) device with an aluminum nitride (AlN) piezoelectric sensor. This innovative architecture leverages a Zr‐rich, leaky antiferroelectric HZO film—a novel material for physical reservoir computing (PRC) devices capable of responding to external stimuli within the microsecond‐to‐millisecond range. We further demonstrate the 3D AFEFET's adaptability by tuning its discharge current via structural modifications, enabling sophisticated multilayered processing. As an integrated in‐sensor processing unit, the 3D AFEFET and AlN sensor array surpass a comparable 2D configuration in both pattern recognition and information density. Our findings showcase a pioneering prototype for future artificial tactile systems, demonstrating the transformative potential of 3D AFEFET PRC devices for advanced neuromorphic applications.