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1
Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: A first-principles study
Hyo-Eun Jung, Mincheol Shin
Nanotechnology, 2017
2
Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors
Hyo-Eun Jung, Mincheol Shin
Journal of Applied Physics, 2015
3
Surface roughness limited mean free path in silicon nanowire field effect transistors
Hyo-Eun Jung, Mincheol Shin
IEEE TED, 2013
4
Nonorthogonal sp3d5 Tight-Binding Parameterization of Single-Layer Phosphorene under Biaxial Strain and Application to FETs
Jaehyun Lee, Junbeom Seo, Jung Hyun Oh, Mincheol Shin
Nanotechnology, 2016.05
5
Density Functional Theory Based Simulation of Silicon Nanowire Field Effect Transistors
Mincheol Shin, Woo Jin Jeong, Jaehyun Lee
J. of Applied Physics, Journal of Applied Physics, 2016.04
6
Performance Assessment of III-V Channel Ultra-thin-body Schottky-Barrier MOSFETs
Jaehyun Lee, Mincheol Shin
IEEE Electron Device Letters, 2014.07
7
P-type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge and Si Channel Devices
Wonchul Choi, Jaehyun Lee, Mincheol Shin
IEEE Transactions on Electron Devices, 2014
8
Simulation Study of Germanium p-type Nanowire Schottky Barrier MosFETs
Jaehyun Lee, Mincheol Shin
IEEE Electron Device Letters, 2013.03
9
Effects of pH and Ion Concentration in Phosphate Buffer Solution on the Sensitivity of the Silicon Nanowire BioFETs
Jaehyun Lee, Mincheol Shin, Chang-Guen Ahn, Chil Seong Ah, Chan Woo Park, Gun Yong Sung
J. of Korean Physical Society, 1970
10
Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors
Mincheol Shin, Jaehyun Lee, Chiyui Ahn
J. of Nanoscience and Nanotechnology, 1970
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