Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors
Jinuk Lee, Jun‐Su Eun, Jeong‐Hyeon Na, Won Ho Park, Junhyeong Park, Junhao Feng, Jaewon Jang, In Man Kang, Jae‐Hoon Park, Xue Zhang, Do Kyung Kim, Jin‐Hyuk Bae