Abstract In this paper, a novel reconfigurable logic‐in‐memory built using silicon transistors is proposed. The silicon transistor can be reconfigured as p ‐ or n ‐switchable memory by controlling the polarity of the gate inputs. These electrical characteristics are enabled by utilizing holes or electrons as the majority charge carriers for the positive feedback loop. The reconfigurable logic‐in‐memory functions of the NOT and YES gates with the same cell comprising a silicon transistor and load resistor are demonstrated. Moreover, it is revealed that a two‐input reconfigurable logic‐in‐memory cell, based on two silicon transistors and a load resistor, functions as negative‐AND and OR gates. This novel reconfigurable logic‐in‐memory technology can facilitate the development of next‐generation low‐power and high‐performance computing.