In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current (IBTBT) according to effective doping concentration of T-CMOS, more accurate current model has been obtained in comparison with the conventional IBTBT models. In addition, parasitic capacitance models are obtained for transient operation. Comparing model and experimental data, it enables the prediction of T-CMOS performance under various VDD conditions. The model is validated to be more suitable for T-CMOS with low power on-chip memory applications.