Tin halide perovskites have served as channel materials for p-type transistors owing to their low hole effective mass and suitable hole density. However, they suffer from uncontrolled film crystallization, leading to excessive tin vacancies and self-p-doping. In this study, we report a facile way to grow three-dimensional (3D) tin halide perovskite films by thermal evaporation on a dangling-bond-free hexagonal boron nitride (hBN) surface. The hBN, transferred onto SiO2 as a gate dielectric/channel interlayer, offers a hydrophobic surface that promotes the crystallization of CsSnI3 films by reducing the nucleation site density, increasing the nuclei size, and promoting the formation of uniformly oriented enlarged grains. CsSnI3 films grown on hBN exhibit reduced pinholes and grain boundaries, reducing the concentration of tin vacancies. Thin-film transistors using these films demonstrate accelerated charge transport with large current modulation without any additives. The proposed strategy can facilitate the engineering of defect-free perovskite channel layers for integrated perovskite electronics.

With the demand for high-performance and miniaturized semiconductor devices continuously rising, the development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in the electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise for advancements in electronics. In this study, we introduced tunneling memtransistors with a thin-film heterostructure composed of 2D semiconducting MoS₂ and WSe₂. Devices with the dual function of tuning and memory operation were realized by the gate-regulated modulation of the barrier height at the heterojunction and manipulation of intrinsic defects within the exfoliated nanoflakes using solution processes. Further, our investigation revealed extensive edge defects and four distinct defect types, namely monoselenium vacancies, diselenium vacancies, tungsten vacancies, and tungsten adatoms, in the interior of electrochemically exfoliated WSe₂ nanoflakes. Additionally, we constructed complementary metal-oxide semiconductor-based logic-in-memory devices with a small static power in the range of picowatts using the developed tunneling memtransistors, demonstrating a promising approach for next-generation low-power nanoelectronics.