Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO <sub>2</sub> on MoN <sub> <i>x</i> </sub> electrodes for improved TiO <sub>2</sub> capacitor performance
Wangu Kang, J.H. Lee, Jeong Hwan Han
IF 5.1Journal of Materials Chemistry C
초록
Oxygen-scavenging MoN x converts ALD MoO x into metastable monoclinic MoO 2 , enabling high-k rutile TiO 2 -based capacitors with low leakage and ultralow EOT.