Owing in part to complementary metal-oxide-semiconductor (CMOS) scaling issues, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide a solution beyond the 22-nm node. Single and few layers of carbon sheets (graphene) have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapor deposition, and field-effect devices have been demonstrated with room temperature field-effect mobilities close to 10 000 cm 2 /Vs. But since graphene is a gapless semiconductor, these transistors have high off-state leakage and nonsaturating drive currents. This is problematic for digital logic, but is acceptable for analog device applications such as low-noise amplifiers and radio-frequency (RF)/millimeter-wave field-effect transistors (FETs). The remarkable transport physics of graphene due to its linear bandstructure have led to novel beyond CMOS logic devices as well, such as “pseudospin” devices.