하태준 교수 연구실
article|
인용수 2
·2025
Enhanced dielectric properties of alternative NO-gas-based SiO2 films via plasma-enhanced chemical vapor deposition for high-performance indium–gallium–zinc oxide thin-film transistors
Se-Ryong Park, Eunha Kim, Yunhui Jang, Youngjin Kang, Yong‐Hoon Kim, Junsin Yi, Tae‐Jun Ha
Journal of Materials Chemistry C
초록
The effects of N 2 annealing on dielectric properties of NO-based SiO 2 films fabricated through plasma-enhanced chemical vapor deposition and device performance of IGZO TFTs with them were investigated underlying the charge-transport mechanism.
키워드
Materials scienceIndiumGalliumChemical vapor depositionZincThin-film transistorDielectricTransistorPlasmaThin film