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1
Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 202505
2
Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications
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Ceramics International, 202503
3
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor
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SOLID-STATE ELECTRONICS, 202502
4
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors
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ACS Applied Materials & Interfaces, 202501
5
Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications
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IEEE Journal of the Electron Devices Society, 202501
6
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors
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Scientific Reports, 202412
7
Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications
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Ceramics International, 202405
8
Floating body effect in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT)
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Scientific Reports, 202405
9
Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors
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SOLID-STATE ELECTRONICS, 202403
10
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor
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IEEE Access, 202402
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