This brief presents a triple-times-sensitive light detection sensor. The proposed sensor performs faster initialization starting from a power-up sequence, caused by the additional delay-cell logic. Furthermore, the finger- and well-type photodiodes detect light more quickly than a conventional structure while occupying the same active area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50\times 50\mu m{}^2$ </tex-math></inline-formula>. The finger-type structure photodiode demonstrates an external quantum efficiency (EQE) of 76%, responsivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>) of 0.336 A/W, specific detectivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$(D^{\ast })$ </tex-math></inline-formula> of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.814\times 10^{11}$ </tex-math></inline-formula> Jones, and noise equivalent power (NEP) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.599\times 10^{-17}$ </tex-math></inline-formula> W with under 550 nm illumination at reverse bias of 1.8 V, which are derived from TCAD simulation results. Both prototype light detection sensor with finger- and well-type photodiodes are implemented in a 180 nm standard CMOS technology (1P6M) and achieved about 3 and 1.3 times faster light detection speed than the conventional structure in optical experiment.