발행물
컨퍼런스
NANO KOREA 2016
2016.07
,
Multilevel Resistive Swithing Memory using Solution Process with Two-dimensional(2D) Materials
Revealing quantum plasmon tunneling through Graphene spacer system
Graphene 2016
Interface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory
2016.04
Multilevel resistive switching memory based on two-dimensional materials using simple solution process
Surface passivation effect on the bias-stress-induced instability of CVD-grown molybdenum disulfide transistor