발행물

전체 논문

396

271

Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power
Shin, GH[Shin, Gwang Hyuk], Park, JH[Park, Jung Hoon], Lee, KJ[Lee, Khang June], Lee, GB[Lee, Geon-Beom], Jeon, HB[Jeon, Hyun Bae], Choi, YK[Choi, Yang-Kyu], Yu, Kyoungsik, Choi, Sung-Yool
ACS APPLIED MATERIALS & INTERFACES, 201901

272

Vertical-Tunnel Field-Effect Transistor Based on a Silicon？MoS2 Three-Dimensional？Two-Dimensional Heterostructure
Shin, GH[Shin, Gwang Hyuk], Koo, B[Koo, Bondae], Park, H[Park, Hamin], Woo, Y[Woo, Youngjun ], Lee, JE[Lee, Jae Eun], Choi, Sung-Yool
ACS APPLIED MATERIALS & INTERFACES, 201811

273

Large-Area CVD-Grown MoS2 Driver Circuit Array for Flexible Organic Light-Emitting Diode Display
Woo, Y[Woo, Youngjun], Hong, W[Hong, Woonggi], Yang, SY[Yang, SangYoon], Kim, HJ[Kim, Ho jin], Cha, JH[Cha, Jun-Hwe], LEE JE[Lee, Jae Eun], Lee, KJ[Lee, Khang June], Kang, T[Kang, Taegyu], Choi, Sung-Yool
Advanced Electronic Materials, 201811

274

A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor
Hur, J[Hur, Jae], Jang, BC[Jang, Byung Chul], Park, J[Park, Jihun], Moon, DI[Moon, Dong-Il], Bae, H[Bae, Hagyoul], Park, JY[Park, Jun-Young], Kim, GH[Kim, Gun-Hee], Jeon, SB[Jeon, Seung-Bae], Seo, M[Seo, Myungsoo], Kim, S[Kim, Sungho], Choi, Sung-Yool, Choi, YK[Choi, Yang-Kyu]
ADVANCED FUNCTIONAL MATERIALS, 201811

275

Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction
Koo, B[Koo, Bondae], Shin, GH[Shin, Gwang Hyuk], Park, H[Park, Hamin], Kim, H[Kim, Hojin], Choi, Sung-Yool
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 201810

276

Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes
Park, IJ[Park, Ick Joon], Kim, TI[Kim, Tae In], Kang, S[Kang, Sumin], Shim, GW[Shim, Gi Woong], Woo, Y[Woo, Youngjun], Kim, TS[Kim, Taek-Soo], Choi, Sung-Yool
NANOSCALE, 201809

277

First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications
Seo, M[Seo, Myungsoo], Kang, MH[Kang, Min Ho], Jeon, SB[Jeon, Seung-Bae], Bae, H[Bae, Hagyoul], Hur, J[Hur, Jae], Jang, BC[Jang, Byung Chul], Yun, S[Yun, Seokjung], Cho, S[Cho, Seongwoo], Kim, WK[Kim, Wu-kang], Kim, MS[Kim, Myung-Su ], Hong, S[HONG, DANIEL SEUNGBUM], Choi, Sung-Yool, Choi, YK[Choi, Yang-Kyu], Hwang, KM[Hwang, Kyu-Man]
IEEE ELECTRON DEVICE LETTERS, 201809

278

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials
Choi, Sung-Yool, Park, H[Park, Hamin], Shin, GH[Shin, Gwang Hyuk], Lee, KJ[Lee, Khang June]
NANOSCALE, 201808

279

Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction
Choi, Sung-Yool, Bang, GS[Bang, Gyeong Sook], Shim GW[Shim, Gi Woong], Shin, GH[Shin, Gwang Hyuk], Jung, DY[Jung, Dae Yool], Park, H[Park, Hamin], Hong W[Hong, Won Gi], Choi JS[Choi, Jinseong], Lee JS[Lee Jaeseung]
ACS OMEGA, 201805

280

High­Performance MoS2 Thin­Film Transistors for Flexible OLED display
Choi, Sung-Yool, Woo, YG[Woo, Youngjun], Hong, WG[Hong, Woonggi], Yang, SY[Yang, SangYoon], Kang, TG[Kang, Taegyu]
SOCIETY FOR INFORMATION DISPLAY, 201805