발행물

전체 논문

396

341

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices
Jeong, HY[Jeong, Hu Young], Kim, SK[Kim, Sung Kyu], Lee, JY[Lee, JeongYong], Choi, Sung-Yool
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011

342

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Jeong, HY[Jeong, Hu-Young], Kim, JY[Kim, Jong-Yun], Kim, JW[Kim, Jeong-Won], Hwang, JO[Hwang, Jin-Ok], Kim, JE[Kim, Ji-Eun], Lee, JY[Lee, Jeong-Yong], Cho, Byung-Jin, Kim, Sang-Ouk, Ruoff, RS[Ruoff, Rodney S.], Choi, Sung-Yool, Yoon, TH[Yoon, Tae-Hyun]
NANO LETTERS, 201011

343

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
Jeong, HY[Jeong, Hu Young], Lee, JY[Lee, JeongYong], Choi, Sung-Yool
ADVANCED FUNCTIONAL MATERIALS, 201011

344

Hybrid nanowire-multilayer graphene film light-emitting sources
Kim, S[Kim, Sangdan], Choi, H[Choi, Hongkyw], Jung, M[Jung, Mi], Choi, Sung-Yool, Ju, S[Ju, Sanghyun]
NANOTECHNOLOGY, 201010

345

Flexible Resistive Switching Memory Device Based on Graphene Oxide
Hong, SK[Hong, Seul Ki], Kim, JE[Kim, Ji Eun], Kim, Sang Ouk, Choi, Sung-Yool, Cho, Byung Jin
IEEE ELECTRON DEVICE LETTERS, 201009

346

Surface Energy Modification by Spin-Cast, Large-Area Graphene Film for Block Copolymer Lithography
Kim, BH[Kim, Bong-Hoon], Kim, JY[Kim, Ju-Young], Jeong, SJ[Jeong, Seong-Jun], Hwang, JO[Hwang, Jin-Ok], Lee, DH[Lee, Duck-Hyun], Shin, DO[Shin, Dong-Ok], Choi, Sung-Yool, Kim, Sang-Ouk
ACS NANO, 201009

347

Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
Jeong, HY[Jeong, Hu Young], Lee, JY[Lee, JeongYong], Choi, Sung-Yool
APPLIED PHYSICS LETTERS, 201007

348

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
Kim, SH[Kim, Sung-Ho], Jeong, HY[Jeong, Hu-Young], Choi, Sung-Yool, Choi, YK[Choi, Yang-Kyu]
APPLIED PHYSICS LETTERS, 201007

349

Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
Lee, JK[Lee, Jung-Kyu], Jeong, HY[Jeong, Hu Young], Cho, IT[Cho, In-Tak], Lee, JY[Lee, JeongYong], Choi, Sung-Yool, Kwon, HI[Kwon, Hyuck-In], Lee, JH[Lee, Jong-Ho]
IEEE ELECTRON DEVICE LETTERS, 201006

350

LOW TEMPERATURE FABRICATION AND PHYSICAL PROPERTIES OF 5 at.% Ga-DOPED ZnO FILMS FOR TRANSPARENT ELECTRODE APPLICATIONS
Kang, YH[Kang, Young Hun], Choi, CG[Choi, Choon-Gi], Choi, Sung-Yool, Nam, E[Nam, Eunkyoung], Jung, D[Jung, Donggeun], Boo, JH[Boo, Jin-Hyo], Kim, JW[Kim, Jeong-Won], Jung, JH[Jung, Ji-Hong], Cha, JS[Cha, Jae Sang], Kim, YS[Kim, Young-Sung]
FUNCTIONAL MATERIALS LETTERS, 201006