발행물

전체 논문

150

91

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Phys. Rev. Lett., 2009

92

Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
K. Zou, X. Hong, D. Keefer, J. Zhu
Phys. Rev. Lett., 2010

93

Mechanism for Current Saturation and Energy Dissipation in Graphene Transistors
A. DaSilva, K. Zou, J. K. Jain, J. Zhu
Phys. Rev. Lett., 2010

94

Quantum scattering time and its implications on scattering sources in graphene
X. Hong, K. Zou, J. Zhu
Phys. Rev. B, 2009

95

High-temperature quantum valley Hall effect with quantized  resistance and a topological switch
K. Huang, H. Fu, K. Watanabe, T. Taniguchi, J. Zhu
Science, 2024

96

A valley valve and electron beam splitter
J. Li, R. Zhang, Z. Yin, J. Zhang, K. Watanabe, T. Taniguchi, C. Liu, J. Zhu
Science, 2018

97

Gate-controlled topological conducting channels in bilayer graphene
J. Li, K. Wang, K. J. McFaul, Z. Zern, Y. F. Ren, K. Watanabe, T. Taniguchi, Z. H. Qiao, J. Zhu
Nature Nanotechnol., 2016

98

Hetero-Orbital Two-Component Fractional Quantum Hall States in Bilayer Graphene
K. Huang, A.C. Balram, H. Fu, C. Guo, K. Watanabe, T. Taniguchi, J.K. Jain, J. Zhu
Physical Review X, 2025

99

Charge Oscillations in Bilayer Graphene Quantum Confinement Devices
H. Fu, K. Huang, K. Watanabe, T. Taniguchi, J. Zhu
Nano Lett., 2023

100

Phase diagram of the ν = 2 quantum Hall state in bilayer graphene
U. Khanna, K. Huang, G. Murthy, H. A. Fertig, K. Watanabe, T. Taniguchi, J. Zhu, E. Shimshoni
Physical Review B, 2023