Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer
Min-Su Kim, Euyjin Park, Seung-Geun Kim, Jae-Hyeun Park, Seung-Hwan Kim, Kyu-Hyun Han, Hyun-Yong Yu
Advanced Materials Interfaces, 2023
12
Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor
June Park, Euyjin Park, Hyun-Yong Yu
Applied Surface Science, 2022
13
Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics
Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu
IEEE Access, 2022
14
Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for sub-3-nm Technology Node
Seung-Geun Jung, Jeong-Kyu Kim, Hyun-Yong Yu
IEEE Transactions on Electron Devices, 2022
15
Analysis of the Thermal Degradation Effect on HfO2-based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System
June Park, Euyjin Park, Seung-Geun Kim, Dong-Gyu Jin, Hyun-Yong Yu
ACS Applied Electronic Materials, 2021
16
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS with Nanosheet FET
Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu
IEEE Journal of the Electron Devices Society, 2021
17
Electrothermal Characterization and Optimization of Monolithic 3D Complementary FET (CFET)