발행물
컨퍼런스
American Physical Society (APS) March Meeting
2025.03
,
Coulomb drag in independently contacted grapheme bilayers
2010 IEEE International Electron Device Meeting (IEDM)
High mobility strained germanium quantum well field effect transistor as the P-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture
TECHCON 2010
2010.09
Coulomb drag in independently-contacted graphene bilayers
68th IEEE Device Research Conference 2010
Ge-SixGe1-x core-shell nanowire tunneling field-effect transistors
The Sixth International Nanotechnology Conference on Communications and Cooperation
2010.05
Independently-contacted Graphene Bilayers: Towards pseudospin-based graphene logic devices