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전체 논문

141

111

Coulomb drag of massless fermions in graphene
Kim, S (Kim, Seyoung), Jo, I (Jo, Insun), Nah, J (Nah, Junghyo), Yao, Z (Yao, Z.), Banerjee, SK (Banerjee, S. K.), Tutuc, E (Tutuc, E.)
PHYSICAL REVIEW B, 201104

112

Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process
Nah, J (Nah, Junghyo), Liu, ES (Liu, En-Shao), Varahramyan, KM (Varahramyan,, Dillen, D (Dillen, Dave), McCoy, S (McCoy, Steve), Chan, J (Chan, Jason), Tutuc, E (Tutuc, Emanuel)
IEEE ELECTRON DEVICE LETTERS, 201012

113

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al(2)O(3) gate dielectric
Shahrjerdi, D (Shahrjerdi, D.), Nah, J (Nah, J.), Hekmatshoar, B (Hekmatshoar, B, Akyol, T (Akyol, T.), Ramon, M (Ramon, M.), Tutuc, E (Tutuc, E.), Banerjee, SK (Banerjee, S. K.)
APPLIED PHYSICS LETTERS, 201011

114

Lateral Spin Injection in Germanium Nanowires
Liu, ES (Liu, En-Shao), Nah, J (Nah, Junghyo), Varahramyan, KM (Varahramyan,, Tutuc, E (Tutuc, Emanuel)
NANO LETTERS, 201009

115

Ge-Si(x)Ge(1-x) Core-Shell Nanowire Tunneling Field-Effect Transistors
Nah, J (Nah, Junghyo), Liu, ES (Liu, En-Shao), Varahramyan, KM (Varahramyan,, Tutuc, E (Tutuc, Emanuel)
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201008

116

Role of Metal-Semiconductor Contact in Nanowire Field-Effect Transistors
Liu, ES (Liu, En-Shao), Jain, N (Jain, Nitesh), Varahramyan, KM (Varahramyan,, Nah, J (Nah, Junghyo), Banerjee, SK (Banerjee, Sanjay, Tutuc, E (Tutuc, Emanuel)
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 201003

117

Scaling Properties of Ge-Si(x)Ge(1-x) Core-Shell Nanowire Field-Effect Transistors
Nah, J (Nah, Junghyo), Liu, ES (Liu, En-Shao), Varahramyan, KM (Varahramyan,, Shahrjerdi, D (Shahrjerdi, Dav, Banerjee, SK (Banerjee, Sanjay, Tutuc, E (Tutuc, Emanuel)
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201002

118

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Li, XS (Li, Xuesong), Cai, WW (Cai, Weiwei), An, JH (An, Jinho), Kim, S (Kim, Seyoung), Nah, J (Nah, Junghyo), Yang, DX (Yang, Dongxing), Piner, R (Piner, Richard), Velamakanni, A (Velamakanni, A, Jung, I (Jung, Inhwa), Tutuc, E (Tutuc, Emanuel), Banerjee, SK (Banerjee, Sanjay, Colombo, L (Colombo, Luigi), Ruoff, RS (Ruoff, Rodney S.)
SCIENCE, 200906

119

Realization of dual-gated Ge-Si(x)Ge(1-x) core-shell nanowire field effect transistors with highly doped source and drain
Nah, J (Nah, Junghyo), Liu, ES (Liu, E. -S.), Shahrjerdi, D (Shahrjerdi, D.), Varahramyan, KM (Varahramyan,, Banerjee, SK (Banerjee, S. K.), Tutuc, E (Tutuc, E.)
APPLIED PHYSICS LETTERS, 200902

120

Realization of a high mobility dual-gated graphene field-effect transistor with Al(2)O(3) dielectric
Kim, S (Kim, Seyoung), Nah, J (Nah, Junghyo), Jo, I (Jo, Insun), Shahrjerdi, D (Shahrjerdi, Dav, Colombo, L (Colombo, Luigi), Yao, Z (Yao, Zhen), Tutuc, E (Tutuc, Emanuel), Banerjee, SK (Banerjee, Sanjay
APPLIED PHYSICS LETTERS, 200902