High mobility strained germanium quantum well field effect transistor as the P-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture
R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, R Kotlyar, V Le, D Lionberger, M Metz, N Mukherjee, J Nah, W Rachmady, M Radosavljevic, U Shah, S Taft, H Then, N Zelick, R Chau
IEEE International Electron Device Meeting (IEDM), 2010