Prognostics and health monitoring of insulated gate bipolar transistors (IGBTs) is a primary concern when determining the reliability of inverter systems. The rising popularity of electric vehicles (EVs) has increased the investigations on the reliability of power modules, particularly that of IGBTs. Condition monitoring of IGBT can be performed using various IGBT characteristic parameters, such as collector-emitter saturation voltage ( $V_{\text{ce,sat}}$ ), collector current ( $I_{\text{C}}$ ), and gate-emitter threshold voltage ( $V_{\text{ge,th}}$ ). This study proposes a programmable method for detecting and pinpointing the location of bond-wire lift-off without accessing the gate signal or the collector and emitter terminals of the targeted IGBT chip or freewheeling diode (FWD). The methodology of collecting and processing the collector-emitter voltage data from the three-phase motor phase terminal voltage is discussed. The proposed approach is validated through simulations of a motor drive system, and its adaptability and sensitivity are confirmed through fault emulation tests and power cycling tests in actual motor drive systems.

Prognostics and health monitoring of insulated gate bipolar transistors (IGBTs) is a primary concern when determining the reliability of inverter systems. The rising popularity of electric vehicles (EVs) has increased the investigations on the reliability of power modules, particularly that of IGBTs. Condition monitoring of IGBT can be performed using various IGBT characteristic parameters, such as collector-emitter saturation voltage ( $V_{\text{ce,sat}}$ ), collector current ( $I_{\text{C}}$ ), and gate-emitter threshold voltage ( $V_{\text{ge,th}}$ ). This study proposes a programmable method for detecting and pinpointing the location of bond-wire lift-off without accessing the gate signal or the collector and emitter terminals of the targeted IGBT chip or freewheeling diode (FWD). The methodology of collecting and processing the collector-emitter voltage data from the three-phase motor phase terminal voltage is discussed. The proposed approach is validated through simulations of a motor drive system, and its adaptability and sensitivity are confirmed through fault emulation tests and power cycling tests in actual motor drive systems.

Insulated gate bipolar transistors (IGBTs) are vulnerable components in electrified powertrain systems, considerably influencing inverter reliability and operational lifespan. Among their various failure mechanisms, bond-wire lift-off is a common package-level failure mode under real-world operating conditions, requiring accurate diagnosis and preventive management. This study focuses on bond-wire lift-off failure mode and proposes a phase-current-based diagnostic method. It is demonstrated that the amplitude of phase-current at the switching frequency increases markedly as bond-wire degradation progresses. The proposed method was validated through Simulink-based simulations and experimental tests using a three-phase inverter. The experimental results confirm that, under bond-wire lift-off fault scenarios, the amplitude at the switching frequency increases by up to six times that of the healthy state. The findings of this study indicate that the proposed method is highly effective in detecting bond-wire degradation in IGBTs and suggest the potential for integrated fault diagnosis of inverters and motors using phase-current signals alone.