Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors | 김상식 교수 연구실 |

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·2025

Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors

Donghyung Lee, Yunwoo Shin, Jaemin Son, Kyoungah Cho, Sangsig Kim

IF 4.6 (2025) Materials Science in Semiconductor Processing

키워드

Ternary operationMaterials scienceBinary numberTransistorNAND gateField-effect transistorLogic gateOptoelectronicsElectronic engineeringElectrical engineering

타입

Article

IF / 인용수

4.6 / 0

원문

https://doi.org/10.1016/j.mssp.2025.109357

게재 연도

2025