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논문
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컨퍼런스

전체 논문

190

181

Selective oxidation behavior of W/WN/Poly-Si1-xGex gate structure in H2O+H2 ambient
이정호
Appl., Phys., Lett. 82, [18], 3011 (2003), 2003

182

Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
이정호
Jpn. J. Appl., Phys Part 1.,42, [4B], 1919 (2003), 2003

183

Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy
이정호
J. Vac. Sci. Technol. B 21, [3] 936 (2003), 2003

184

Oxidation of ultrathin hafnium on Si(001): silicate formation by silicon migration
이정호
Phys. Rev. B 66, 233309 (2002), 2002

185

Multiple phase structures of Hf silicide precipitated from Hf silicate: An atomic view
이정호
J. Vac. Sci. Technol. A 20, [5] 1824 (2002), 2002

186

Analysis of interfacial silicates and silicides formed by annealing ultrathin Hf on SiO2: Effect of Hf/SiO2 thickness ratio
이정호
J. Appl. Phys. 92, [4] 1929 (2002), 2002

187

Compositionally graded hafnium silicate studied by chemically selective scanning tunneling microscope spectroscopy
이정호
J. Appl. Phys. 91, [9] 5661 (2002)., 2002

188

Lower sheet/contact resistance in shallower junction obtained by F+B mixed implant
이정호
J. Vac. Sci. Technol. B 20, [1] 396 (2002)., 2002

189

Impacts of Self-aligned Epitaxial silicon Sliver (SESS) in Buried Channel-pFETs Elevated Source/Drain Using Dual-Spacer Structure
이정호
Jpn. J. Appl., Phys. Part 1., 39 [4B] 2151 (2000)., 2000

190

Analysis of the improved contact resistance in metal-p+ silicon Schottky barriers using the BF2/B mixed implantation
이정호
Appl., Phys., Lett. 75, [9], 1284 (1999)., 1999