자연과학 연구실

Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses

Plasma Damage Effects on SiO2 Thin Films Determined by Nanoindenter Under Various Etching Conditions Using ACP Source

Analysis and Measurement of Volume Change by Transformation of Crystal Between Hf and HfOx Thin Film During Oxidation Using Nanoindenter