발행물
컨퍼런스
2011 Semiconductor Interface Specialists Conference
2011.12
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Influence of Interface Traps inside Conduction Band on C-V Characteristics of InGaAs MOS Capacitors
2011 International Electron Devices Meeting (IEDM)
Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation
2010 International Electron Devices Meeting (IEDM)
2010.12
Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy
2010 International conference on Solid State Devices and Materials (SSDM)
2010.09
InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 gate stacks
Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding