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11
Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal
Kwon, MK, Kim, JY, Park, IK, Kim, KS, Jung, GY, Park, SJ, Kim, JW, Kim, YC
APPLIED PHYSICS LETTERS, 2008
12
Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
Kim, JY, Kwon, MK, Park, IK, Cho, CY, Park, SJ, Jeon, DM, Kim, JW, Kim, YC
APPLIED PHYSICS LETTERS, 2008
13
Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
Kim, JW, Lee, KH, Hong, S
THIN SOLID FILMS, 2007
14
Blue and green emission using In(Ga)N/GaN quantum wells with InN well layers grown by metalorganic chemical vapor deposition
Kong, BH, Kim, DC, Cho, HK, Lee, KH, Kim, JW, Kim, BJ
JOURNAL OF CRYSTAL GROWTH, 2007
15
Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers
Cho, HK, Kim, DC, Kong, BH, Lee, KH, Oh, JT, Kim, S, Kim, DJ, Kim, JW, Hong, SK
JOURNAL OF CRYSTAL GROWTH, 2005
16
Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
Kim, S, Oh, J, Kang, J, Kim, D, Won, J, Kim, JW, Cho, HK
JOURNAL OF CRYSTAL GROWTH, 2004
17
Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN
Choi, IH, Kim, JW, Kim, SI, Kim, YT, Kim, S, Sung, MY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001
18
Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
Kim, JW, Son, CS, Choi, IH, Park, YK, Kim, YT, Ambacher, O, Stutzmann, M
JOURNAL OF CRYSTAL GROWTH, 2000
19
Passivation of HgCdTe by Thermal Evaporated CdZnTe
김제원, 0, 0, 0, 0
응용물리, 1998
20
Iodine and arsenic doping of (100)HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic
Song, JH, Kim, JW, Park, MJ, Kim, JS, Jung, KU, Suh, SH
JOURNAL OF CRYSTAL GROWTH, 1998
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