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전체 특허
2T DRAM Cell with Asymmetric Parasitic Capacitors and 2T DRAM Cell Array
10-2025-0007741
2025.01
Memory Device Including In-Memory Operation Circuit and Operating Method Thereof
10-2024-0065356
2024.05
4T TCAM Cell Utilizing Dual-Gate Transistors, 4T TCAM Cell Array, and Method for Writing Information to the 4T TCAM
10-2024-0052665
2024.04
Three Terminal Two Transistor DRAM Cell and Operation Method Thereof
10-2023-0194399
2023.12
Synapse Device and Method of Operating the Same
18/522,109
2023.11
A Method for Drive IGZO 2T Synaptic Array in Parallel
10-2025-0075570 (Korea, pending)
2025.06
Display Panel, Electronic Device Including the Same, and Manufacturing Method for the Display Panel
10-2025-0037257 (Korea, pending)
2025.03
Semiconductor Devices
19/217531 (US, pending)
2025.03
2T DRAM Cell with Asymmetric Parastic Capacitor and 2T DRAM Cell Array
19/059,977 (US, pending)
2025.02
4T TCAM Cell Utilizing Dual-Gate Transistors, 4T TCAM Cell Array, and Method for Writing Information to 4T TCAM
19/024,695 (US, pending)
2025.01
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