A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells

Formation of a low-resistance and high reflectivity reflector on p-type GaN with a AgAl Ohmic contact

SiO2/ITO 광결정에 의한 LED 광추출 효율 향상

Sb 계면활성제에 의한 p-GaN 박막의 홀농도 향상

Si delta doping in a GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode

Two-step growth of GaN films grown on Si(111) substrate by using SiC intermediate layer

Effect of an Al pre-seeded AlN buffer on GaN films grown on Si(111) substrates by using SiC intermediate layers