발행물
컨퍼런스
2009 LED·반도체조명학회 가을 학술대회
2009
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Analysis of reverse biased electrical property in InGaN Light Emitting Diode by the three-dimensional circuit modeling
Bow Measurement and Stress Analysis of GaN LED Epi-Wafers Grown on Sapphire Substrates
Analysis of LED structure using Glow Discharge Spectrometer
NUSOD `09
3-Dimensional Current Flow Analysis in InGaN Light Emitting Diodes
Asia-Pacific workshop on wide gap semiconductors 2009
A Measurement Method of internal Quantum Efficiency InGaN-based Multiple Quantum Well Structure