ARPES, PLS, Pohang, Korea
user facility (since 2013.01.01) 4A1 beamline, Pohang Light Source, POSTECH - Insertion device: Undulator - Beam energy : 25 ~ 1000 eV - Energy resolution : E/ΔE = 10000 ~ 30000 - Photon count : > 10^10 photons/sec·(0.1% bandwidth) - Beam size : 10 μm × 10 μm - Electron analyser: Scienta R4000 - LEED, Sputter gun - Open cycle cryostat - Main chamber-Preparation ch.-Loadlock ch.
Chemical Hood (H1:sol-gel film fabrication , H2:general chemical process)
Clean Benches (home-made, H3: Graphene transfer, H4: general purpose)
HEFA Filter fan unit for home-made cleanbenchs (VUUM FFU) Vuum
Digital hotplate (400'C, temperature variation<1'C)
(HHP-411) (2013.10.26)
Transition metal dichalcogenide (TMDC) films (CVD)
Transparent metal oxide films (PED)
Transparent metal oxide films (sol-gel)
AlGaN/GaN heterostructure on Si wafer (MOCVD)