The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices
Huang, F (Huang, Fu), Cho, B (Cho, Byungjin), Chung, HS (Chung, Hee-Suk), Son, SB (Son, Seung Bae), Kim, JH (Kim, Jung Han), Bae, TS (Bae, Tae-Sung), Yun, HJ (Yun, Hyung Joong), Sohn, JI (Sohn, Jung Inn), Oh, KH (Oh, Kyu Hwan), Hahm, MG (Hahm, Myung Gwan), Park, JH (Park, Jung Hee), Hong, WK (Hong, Woong-Ki)...Mo
NANOSCALE, 2016