Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
Kim, TW[Kim, Tae-Wook], Choi, H[Choi, Hyejung], Oh, SH[Oh, Seung-Hwan], Jo, M[Jo, Minseok], Wang, G[Wang, Gunuk], Cho, B[Cho, Byungjin], Kim, DY[Kim, Dong-Yu], Hwang, H [Hwang, Hyunsang], Lee, TH[Lee, Takhee]
Nanotechnology, 200901