Dry etch of GaN/InGaN multi-quantum wells using inductively coupled Cl2/CH4/H2/Ar plasma

Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple quantum well blue light-emitting diodes

Effect of alcohol-based sulfur treatment on Pt ohmic contact to p-type GaN

Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN

Modeling of a GaN-based light emitting diode for uniform current spreading

Dry etch damage and its recovery by treatment with an N2 plasma

Electromigration-induced failure of GaN multi-quantum well light emitting diodes

Effective sulfur passivation of an n-type GaN surface by an alcoholic-based sulfide solution

Dry etch damage in n-type GaN and its recovery by treatment with an N-2 plasma