The development of high-performance p-channel transistors remains a critical challenge in complementary logic circuits, despite significant advances in n-channel transistor technologies. While amorphous oxide semiconductors have revolutionized n-type transistors, achieving comparable performance for p-type counterparts has proven elusive. Here, this study demonstrates a breakthrough in p-channel technology by transforming crystalline 2D tellurium (2D-Te) into amorphous tellurium trioxide (a-TeO₃) through UV ozone treatment. This structural transformation, directly observed via high-resolution transmission electron microscopy, induces dramatic changes in electronic properties, including significant bandgap widening and enhanced work function. The resulting a-TeO₃-based p-channel transistors demonstrate remarkable improvements over crystalline 2D-Te transistors, featuring reduced hysteresis, superior on/off characteristics, and distinctive mobility behavior at different temperatures and gate fields. Most notably, these transistors achieve exceptionally low barrier height (10 meV) and sheet resistance values, while combining high hole mobility with excellent switching properties. The work not only introduces a novel high-performance p-channel semiconductor but also opens new avenues for phase engineering in advanced semiconductor development.

Growth of 2D van der Waals layered single-crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties of materials, but also to enable the development of unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) films has not been established to date. Here, the SC growth of TMdC monolayers on a centimeter scale via the atomic sawtooth gold surface as a universal growth template is reported. The atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission electron microscopy. The anisotropic adsorption energy of the TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of the Miller indices. Growth using the atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS₂ , WSe₂ , MoS₂ , the MoSe₂ /WSe₂ heterostructure, and W_1- _x Mo_x S₂ alloys. This strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures on a wafer scale, to further facilitate the applications of TMdCs in post-silicon technology.