Filamentary-based organic memristors for wearable neuromorphic computing systems

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

Flexible Organic Ferroelectric Synaptic Transistors for Wearable Neuromorphic Systems

Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions

Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing