Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer
정승준, 박진수, 민미숙, 조경준, Der-Hsien Lien, Geun Ho Ahn, 장진곤, 유대경, Ali Javey, 이탁희
Applied Physics Letters, 2016
106
Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes
정승준
NANOTECHNOLOGY, 2016
107
Improved photoswitching response times of MoS<sub>2</sub> field-effect transistors by stacking <i>p</i>-type copper phthalocyanine layer
정승준
APPLIED PHYSICS LETTERS, 2016
108
Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
정승준
SCIENTIFIC REPORTS, 2016
109
Laser direct writing and inkjet printing for a sub-2μm channel length MoS<sub>2</sub> transistor with high-resolution electrodes
정승준
NANOTECHNOLOGY, 2016
110
Non-volatile aluminum oxide resistive memory devices on a wrapping paper substrate