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주요 논문

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전체 논문

204

101

Fully inkjet-printed short-channel organic thin-film transistors and inverter arrays on flexible substrates
정승준
FLEXIBLE AND PRINTED ELECTRONICS, 2016

102

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes
정승준, 김재근, 조경준, 김태영, 박진수, 장진곤, 송영걸, 김영록, 최유리, 홍웅기, 이탁희
Scientific reports, 2016

103

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS<sub>2</sub> p-n heterojunction diodes
정승준
SCIENTIFIC REPORTS, 2016

104

Laser direct writing and inkjet printing for a sub-2 mu m channel length MoS2 transistor with high-resolution electrodes
Kwon, HJ (Kwon, Hyuk-Jun), Chung, S (Chung, Seungjun), Jang, J (Jang, Jaewon), Grigoropoulos, CP (Grigoropoul
NANOTECHNOLOGY, 2016

105

Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer
정승준, 박진수, 민미숙, 조경준, Der-Hsien Lien, Geun Ho Ahn, 장진곤, 유대경, Ali Javey, 이탁희
Applied Physics Letters, 2016

106

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes
정승준
NANOTECHNOLOGY, 2016

107

Improved photoswitching response times of MoS<sub>2</sub> field-effect transistors by stacking <i>p</i>-type copper phthalocyanine layer
정승준
APPLIED PHYSICS LETTERS, 2016

108

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
정승준
SCIENTIFIC REPORTS, 2016

109

Laser direct writing and inkjet printing for a sub-2μm channel length MoS<sub>2</sub> transistor with high-resolution electrodes
정승준
NANOTECHNOLOGY, 2016

110

Non-volatile aluminum oxide resistive memory devices on a wrapping paper substrate
정승준
FLEXIBLE AND PRINTED ELECTRONICS, 2016