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ContactEngineered Electrical Properties of MoS2 FieldEffect Transistors via Selectively Deposited ThiolMolecules
이탁희, 최유리, 신지원, 김태영, 강기훈, 김재근, 박진수, 조경준, 정승준
Advanced materials, 2018
82
Highly Reliable Superhydrophobic Protection for Organic Field-Effect Transistors by Fluoroalkylsilane-Coated TiO2 Nanoparticles
D. Yoo, Y. Kim, M. Min, G. H. Ahn, D-H. Lien, J. Jang, H. Jeong, Y. Song, S. Chung*, A. Javey, T. Lee*
ACS Nano, 2018
83
Artificial Soft Elastic Media with Periodic Hard Inclusions for Tailoring Strain-Sensitive Thin Film Responses
J. Byun, S. Chung*, Y. Hong*
Advanced Materials, 2018
84
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
J. Pak, Y. Jang, J. Byun, K. Cho, T.-Y. Kim, J.-K. Kim, B. Y. Choi, J. Shin, Y. Hong, S. Chung*, T. Lee*
ACS Nano, 2018
85
Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules
K. Cho, J. Pak, J.‐K. Kim, K. Kang, T.‐Y. Kim, J. Shin, B. Y. Choi, S. Chung*, T. Lee*
Advanced Materials, 2018
86
Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure
J. Jang, H‐H. Choi, S. H. Paik, J. K. Kim, S. Chung, J. H. Park*
Advanced Electronic Materials, 2018
87
Electronic Skins for Soft, Compact, Reversible Assembly of Wirelessly Activated Fully Soft Robots
J. Byun, Y. Lee, J. Yoon, B. Lee, E. Oh, S. Chung, T. Lee, K.-J. Cho, J. Kim, Y. Hong*
Science Robotics, 2018
88
Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors
B. Y. Choi, K. Cho, J. Pak, T.-Y. Kim, J.-K. Kim, J. Shin, J. Seo, S. Chung, T. Lee*
Journal of the Korean Physical Society, 2018
89
Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM
S. Lee, T. Kim, B. Jang, W.-Y. Lee, K. C. Song, H. S. Kim, G. Y. Do, S. B. Hwang, S. Chung, J. Jang*
IEEE Electron Device Letters, 2018
90
Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS<sub>2</sub> field effect transistors
정승준
NANOTECHNOLOGY, 2017
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