발행물
컨퍼런스
제7회 반도체학술대회
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Electrical characteristics of AlOxNy prepared by oxidation of sub 10nm-thick AlN films for MOS gate dielectrics applications
제 6회 한국반도체 학술대회논문집
Effects of growth temperature on GaN nucleation layer grown by MOCVD
First Joint Symposium between JASRI and PAL
In-situ synchrotron x-ray scattering study of the formation of g-Al2O3 thin films from AlN
Proceedings of the 1998 MRS Spring Meeting
Temperature-Driven Oxidation Behavior of Pure Iron Surface Investigated by Time-Resolved EXAFS Measurements
Proceedings of the 1997 MRS Fall Symposium
Suppression of the tetragonal distortion in thin Pb(Zr, Ti)O3 films grown on MgO(001)